Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 IPD038N06NF2SATMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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€ 69,30
€ 0,693 Katrs (tiek piegadats Rulli) (bez PVN)
€ 83,85
€ 0,839 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
€ 69,30
€ 0,693 Katrs (tiek piegadats Rulli) (bez PVN)
€ 83,85
€ 0,839 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 100 - 240 | € 0,693 | € 6,93 |
| 250 - 490 | € 0,664 | € 6,64 |
| 500 - 990 | € 0,635 | € 6,35 |
| 1000+ | € 0,402 | € 4,02 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products