Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1

RS noliktavas nr.: 232-0396Ražotājs: InfineonRažotāja kods: IMW65R083M1HXKSA1
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Tehniskie dokumenti

Specifikācija

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

CoolSiC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.111 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Transistor Material

Silicon

Number of Elements per Chip

1

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Noliktavas stāvoklis patreiz nav pieejams

€ 168,00

€ 5,60 Katrs (Tubina ir 30) (bez PVN)

€ 203,28

€ 6,776 Katrs (Tubina ir 30) (Ieskaitot PVN)

Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1

30

Pieejams komplektos pa 30
30€ 168,00
60€ 318,00
90€ 477,00
120€ 636,00
150€ 742,50
180€ 891,00
210€ 1 039,50
240€ 1 188,00
270€ 1 336,50
300€ 1 485,00
330€ 1 633,50
360€ 1 782,00
390€ 1 930,50
420€ 2 079,00
450€ 2 227,50

€ 168,00

€ 5,60 Katrs (Tubina ir 30) (bez PVN)

€ 203,28

€ 6,776 Katrs (Tubina ir 30) (Ieskaitot PVN)

Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1
Noliktavas stāvoklis patreiz nav pieejams

30

Pieejams komplektos pa 30
30€ 168,00
60€ 318,00
90€ 477,00
120€ 636,00
150€ 742,50
180€ 891,00
210€ 1 039,50
240€ 1 188,00
270€ 1 336,50
300€ 1 485,00
330€ 1 633,50
360€ 1 782,00
390€ 1 930,50
420€ 2 079,00
450€ 2 227,50

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Penālis
30 - 30€ 5,60€ 168,00
60 - 120€ 5,30€ 159,00
150+€ 4,95€ 148,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

CoolSiC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.111 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Transistor Material

Silicon

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more