Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 79 A, 650 V, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
79 A
Maximum Drain Source Voltage
650 V
Series
CoolSiC MOSFET 650 V G1
Package Type
PG-HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
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€ 22,30
€ 22,30 Katrs (bez PVN)
€ 26,98
€ 26,98 Katrs (Ieskaitot PVN)
Standarts
1
€ 22,30
€ 22,30 Katrs (bez PVN)
€ 26,98
€ 26,98 Katrs (Ieskaitot PVN)
Standarts
1
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| Daudzums | Vienības cena |
|---|---|
| 1 - 9 | € 22,30 |
| 10 - 99 | € 20,10 |
| 100+ | € 18,50 |
Ideate. Create. Collaborate
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No hidden fees!
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- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
79 A
Maximum Drain Source Voltage
650 V
Series
CoolSiC MOSFET 650 V G1
Package Type
PG-HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products