Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
315 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
20 mW
Number of Transistors
4
Configuration
Triple
Package Type
AG-EASY3B
Mounting Type
Through Hole
Channel Type
P
Izcelsmes valsts
Germany
Noliktavas stāvoklis patreiz nav pieejams
P.O.A.
Infineon F3L500R12W3H7H20BPSA1, P-Channel Triple IGBT Module, 315 A 1200 V AG-EASY3B, Through Hole
1
P.O.A.
Infineon F3L500R12W3H7H20BPSA1, P-Channel Triple IGBT Module, 315 A 1200 V AG-EASY3B, Through Hole
Noliktavas stāvoklis patreiz nav pieejams
1
Noliktavas stāvoklis patreiz nav pieejams
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Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
315 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
20 mW
Number of Transistors
4
Configuration
Triple
Package Type
AG-EASY3B
Mounting Type
Through Hole
Channel Type
P
Izcelsmes valsts
Germany