Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
20 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
1
Width
3.9mm
Length
4.95mm
Typical Gate Charge @ Vgs
19 nC @ 8V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.5mm
Izcelsmes valsts
China
€ 427,50
€ 0,171 Katrs (Rulli ir 2500) (bez PVN)
€ 517,28
€ 0,207 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 427,50
€ 0,171 Katrs (Rulli ir 2500) (bez PVN)
€ 517,28
€ 0,207 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
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Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
6.5 A
Maximum Drain Source Voltage
20 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
1
Width
3.9mm
Length
4.95mm
Typical Gate Charge @ Vgs
19 nC @ 8V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.5mm
Izcelsmes valsts
China