Diodes Inc N-Channel MOSFET, 15.4 A, 30 V, 3-Pin SOT-223 DMN3032LE-13
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
15.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.55mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.55mm
Typical Gate Charge @ Vgs
11.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.65mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 46,08
€ 0,384 Katrs (tiek piegadats Rulli) (bez PVN)
€ 55,76
€ 0,465 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
120
€ 46,08
€ 0,384 Katrs (tiek piegadats Rulli) (bez PVN)
€ 55,76
€ 0,465 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
120
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 120 - 600 | € 0,384 | € 7,68 |
| 620 - 1240 | € 0,333 | € 6,66 |
| 1260+ | € 0,279 | € 5,58 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
15.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.55mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.55mm
Typical Gate Charge @ Vgs
11.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.65mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products