Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
X2-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.95V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1.05mm
Typical Gate Charge @ Vgs
1.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.35mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 7,15
€ 0,143 Katrs (tiek piegadats Rulli) (bez PVN)
€ 8,65
€ 0,173 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
50
€ 7,15
€ 0,143 Katrs (tiek piegadats Rulli) (bez PVN)
€ 8,65
€ 0,173 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
50
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Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
X2-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.95V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1.05mm
Typical Gate Charge @ Vgs
1.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.35mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts