Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
280 mA, 620 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.7 Ω, 6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.25mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Length
1.7mm
Typical Gate Charge @ Vgs
0.28 nC @ 4.5 V, 0.3 nC @ 4.5 V
Height
0.6mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 9,40
€ 0,188 Katrs (tiek piegadats Rulli) (bez PVN)
€ 11,37
€ 0,227 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
50
€ 9,40
€ 0,188 Katrs (tiek piegadats Rulli) (bez PVN)
€ 11,37
€ 0,227 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
50
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
280 mA, 620 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.7 Ω, 6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.25mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Length
1.7mm
Typical Gate Charge @ Vgs
0.28 nC @ 4.5 V, 0.3 nC @ 4.5 V
Height
0.6mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts