Diodes Inc P-Channel MOSFET, 460 mA, 20 V, 3-Pin SOT-523 DMG1013T-7
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
460 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
270 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Typical Gate Charge @ Vgs
0.58 nC @ 4.5 V
Width
0.85mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1.7mm
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 3,60
€ 0,036 Katrs (tiek piegadats Rulli) (bez PVN)
€ 4,36
€ 0,044 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
€ 3,60
€ 0,036 Katrs (tiek piegadats Rulli) (bez PVN)
€ 4,36
€ 0,044 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
460 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
270 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Typical Gate Charge @ Vgs
0.58 nC @ 4.5 V
Width
0.85mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1.7mm
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products