Tehniskie dokumenti
Specifikācija
Transistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Operating Frequency
60 Hz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.3 x 4.5 x 15.8mm
Produkta apraksts
High Voltage Transistors, WeEn Semiconductors
Bipolar Transistors, WeEn Semiconductors
€ 8,17
€ 0,817 Katrs (tiek piegadats Tubina) (bez PVN)
€ 9,89
€ 0,989 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
€ 8,17
€ 0,817 Katrs (tiek piegadats Tubina) (bez PVN)
€ 9,89
€ 0,989 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Penālis |
---|---|---|
10 - 20 | € 0,817 | € 4,08 |
25 - 45 | € 0,752 | € 3,76 |
50 - 95 | € 0,692 | € 3,46 |
100+ | € 0,562 | € 2,81 |
Tehniskie dokumenti
Specifikācija
Transistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Operating Frequency
60 Hz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.3 x 4.5 x 15.8mm
Produkta apraksts