Vishay N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB SUP70040E-GE3

RS noliktavas nr.: 124-2249Ražotājs: VishayRažotāja kods: SUP70040E-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.51mm

Typical Gate Charge @ Vgs

76 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

15.49mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Izcelsmes valsts

Taiwan, Province Of China

Produkta apraksts

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 16,25

€ 3,25 Katrs (Paka ir 5) (bez PVN)

€ 19,66

€ 3,932 Katrs (Paka ir 5) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB SUP70040E-GE3
Izvēlēties iepakojuma veidu

€ 16,25

€ 3,25 Katrs (Paka ir 5) (bez PVN)

€ 19,66

€ 3,932 Katrs (Paka ir 5) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB SUP70040E-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
5 - 45€ 3,25€ 16,25
50 - 120€ 2,40€ 12,00
125 - 245€ 2,15€ 10,75
250 - 495€ 1,95€ 9,75
500+€ 1,80€ 9,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.51mm

Typical Gate Charge @ Vgs

76 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

15.49mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Izcelsmes valsts

Taiwan, Province Of China

Produkta apraksts

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more