Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
100 V
Package Type
PowerPAK 1212-8 Dual
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.167 O, 0.251 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5 V, 2.5 V
Transistor Material
Si
Number of Elements per Chip
2
€ 87,60
€ 0,876 Katrs (tiek piegadats Rulli) (bez PVN)
€ 106,00
€ 1,06 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
€ 87,60
€ 0,876 Katrs (tiek piegadats Rulli) (bez PVN)
€ 106,00
€ 1,06 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
100
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Rullis |
---|---|---|
100 - 240 | € 0,876 | € 8,76 |
250 - 490 | € 0,792 | € 7,92 |
500 - 990 | € 0,746 | € 7,46 |
1000+ | € 0,70 | € 7,00 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
100 V
Package Type
PowerPAK 1212-8 Dual
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.167 O, 0.251 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5 V, 2.5 V
Transistor Material
Si
Number of Elements per Chip
2