Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.98mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.08mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.85mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 4,98
€ 0,249 Katrs (Paka ir 20) (bez PVN)
€ 6,03
€ 0,301 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
€ 4,98
€ 0,249 Katrs (Paka ir 20) (bez PVN)
€ 6,03
€ 0,301 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
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Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.98mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.08mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.85mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts