Toshiba Silicon N-Channel MOSFET, 168 A, 75 V, 8-Pin SOP TPH2R608NH,L1Q(M

RS noliktavas nr.: 236-3627Ražotājs: ToshibaRažotāja kods: TPH2R608NH,L1Q(M
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Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

168 A

Maximum Drain Source Voltage

75 V

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.6e+006 Ω

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

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Noliktavas stāvoklis patreiz nav pieejams

€ 5 750,00

€ 1,15 Katrs (Rulli ir 5000) (bez PVN)

€ 6 957,50

€ 1,392 Katrs (Rulli ir 5000) (Ieskaitot PVN)

Toshiba Silicon N-Channel MOSFET, 168 A, 75 V, 8-Pin SOP TPH2R608NH,L1Q(M

€ 5 750,00

€ 1,15 Katrs (Rulli ir 5000) (bez PVN)

€ 6 957,50

€ 1,392 Katrs (Rulli ir 5000) (Ieskaitot PVN)

Toshiba Silicon N-Channel MOSFET, 168 A, 75 V, 8-Pin SOP TPH2R608NH,L1Q(M
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

168 A

Maximum Drain Source Voltage

75 V

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2.6e+006 Ω

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more