STMicroelectronics STripFET II N-Channel MOSFET, 25 A, 100 V, 3-Pin DPAK STD25NF10LT4
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Series
STripFET II
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Maximum Operating Temperature
+175 °C
Width
6.2mm
Typical Gate Charge @ Vgs
38 nC @ 5 V
Height
2.4mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 13,00
€ 2,60 Katrs (Paka ir 5) (bez PVN)
€ 15,73
€ 3,146 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 13,00
€ 2,60 Katrs (Paka ir 5) (bez PVN)
€ 15,73
€ 3,146 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 5 | € 2,60 | € 13,00 |
| 10 - 20 | € 2,20 | € 11,00 |
| 25 - 95 | € 2,15 | € 10,75 |
| 100 - 495 | € 1,70 | € 8,50 |
| 500+ | € 1,55 | € 7,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Series
STripFET II
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Maximum Operating Temperature
+175 °C
Width
6.2mm
Typical Gate Charge @ Vgs
38 nC @ 5 V
Height
2.4mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products