Nexperia PMV250EPEA P-Channel MOSFET, 1.5 A, 40 V, 3-Pin SOT-23 PMV250EPEAR

RS noliktavas nr.: 136-4864Ražotājs: NexperiaRažotāja kods: PMV250EPEAR
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Specifikācija

Channel Type

P

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

40 V

Series

PMV250EPEA

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

6.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

4.7 nC @ -10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

Automotive Standard

AEC-Q101

Produkta apraksts

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Noliktavas stāvoklis patreiz nav pieejams

€ 9,10

€ 0,091 Katrs (Paka ir 100) (bez PVN)

€ 11,01

€ 0,11 Katrs (Paka ir 100) (Ieskaitot PVN)

Nexperia PMV250EPEA P-Channel MOSFET, 1.5 A, 40 V, 3-Pin SOT-23 PMV250EPEAR
Izvēlēties iepakojuma veidu

€ 9,10

€ 0,091 Katrs (Paka ir 100) (bez PVN)

€ 11,01

€ 0,11 Katrs (Paka ir 100) (Ieskaitot PVN)

Nexperia PMV250EPEA P-Channel MOSFET, 1.5 A, 40 V, 3-Pin SOT-23 PMV250EPEAR
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

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Ideate. Create. Collaborate

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No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

40 V

Series

PMV250EPEA

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

6.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

4.7 nC @ -10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

Automotive Standard

AEC-Q101

Produkta apraksts

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more