Infineon BFS481H6327XTSA1 Dual NPN Transistor, 12 V, 6-Pin SOT-363

RS noliktavas nr.: 752-8148Ražotājs: InfineonRažotāja kods: BFS481H6327XTSA1
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Tehniskie dokumenti

Specifikācija

Brand

Infineon

Transistor Type

NPN

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Maximum Power Dissipation

175 mW

Transistor Configuration

Isolated

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Pin Count

6

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Dimensions

2 x 1.25 x 0.8mm

Produkta apraksts

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

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onsemi SBC847CDW1G Dual NPN Transistor, 100 mA, 45 V, 6-Pin SOT-363
onsemi SBC847CDW1G Dual NPN Transistor, 100 mA, 45 V, 6-Pin SOT-363Ražotājs: onsemi
€ 0,122Katrs (tiek piegadats Lente) (bez PVN)

€ 4,69

€ 0,469 Katrs (Paka ir 10) (bez PVN)

€ 5,67

€ 0,567 Katrs (Paka ir 10) (Ieskaitot PVN)

Infineon BFS481H6327XTSA1 Dual NPN Transistor, 12 V, 6-Pin SOT-363

10

Pieejams komplektos pa 10
10€ 4,69
20€ 9,38
30€ 14,07
40€ 18,76
50€ 12,25
60€ 14,70
70€ 17,15
80€ 19,60
90€ 22,05
100€ 23,60
110€ 25,96
120€ 28,32
130€ 30,68
140€ 33,04
150€ 35,40

€ 4,69

€ 0,469 Katrs (Paka ir 10) (bez PVN)

€ 5,67

€ 0,567 Katrs (Paka ir 10) (Ieskaitot PVN)

Infineon BFS481H6327XTSA1 Dual NPN Transistor, 12 V, 6-Pin SOT-363

Noliktavas stāvoklis patreiz nav pieejams

10

Pieejams komplektos pa 10
10€ 4,69
20€ 9,38
30€ 14,07
40€ 18,76
50€ 12,25
60€ 14,70
70€ 17,15
80€ 19,60
90€ 22,05
100€ 23,60
110€ 25,96
120€ 28,32
130€ 30,68
140€ 33,04
150€ 35,40

Noliktavas stāvoklis patreiz nav pieejams

DaudzumsVienības cenaPer Iepakojums
10 - 40€ 0,469€ 4,69
50 - 90€ 0,245€ 2,45
100 - 190€ 0,236€ 2,36
200 - 390€ 0,231€ 2,31
400+€ 0,228€ 2,28

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
onsemi SBC847CDW1G Dual NPN Transistor, 100 mA, 45 V, 6-Pin SOT-363
onsemi SBC847CDW1G Dual NPN Transistor, 100 mA, 45 V, 6-Pin SOT-363Ražotājs: onsemi
€ 0,122Katrs (tiek piegadats Lente) (bez PVN)

Tehniskie dokumenti

Specifikācija

Brand

Infineon

Transistor Type

NPN

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Maximum Power Dissipation

175 mW

Transistor Configuration

Isolated

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Pin Count

6

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Dimensions

2 x 1.25 x 0.8mm

Produkta apraksts

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
onsemi SBC847CDW1G Dual NPN Transistor, 100 mA, 45 V, 6-Pin SOT-363
onsemi SBC847CDW1G Dual NPN Transistor, 100 mA, 45 V, 6-Pin SOT-363Ražotājs: onsemi
€ 0,122Katrs (tiek piegadats Lente) (bez PVN)