Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
150 V
Series
HEXFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.295 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
€ 122,50
€ 2,45 Katrs (tiek piegadats Rulli) (bez PVN)
€ 148,22
€ 2,964 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
50
€ 122,50
€ 2,45 Katrs (tiek piegadats Rulli) (bez PVN)
€ 148,22
€ 2,964 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
50
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Rullis |
---|---|---|
50 - 120 | € 2,45 | € 12,25 |
125 - 245 | € 2,30 | € 11,50 |
250 - 495 | € 2,15 | € 10,75 |
500+ | € 1,95 | € 9,75 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
150 V
Series
HEXFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.295 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon