Wolfspeed Dual SiC N-Channel MOSFET, 325 A, 1700 V, 7-Pin Half Bridge CAS300M17BM2

RS noliktavas nr.: 916-3876Ražotājs: WolfspeedRažotāja kods: CAS300M17BM2
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

325 A

Maximum Drain Source Voltage

1700 V

Package Type

Half Bridge

Mounting Type

Screw Mount

Pin Count

7

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

1.76 kW

Transistor Configuration

Series

Maximum Gate Source Voltage

-10 V, +25 V

Width

61.4mm

Transistor Material

SiC

Number of Elements per Chip

2

Length

106.4mm

Typical Gate Charge @ Vgs

1076 nC @ 20 V, 1076 nC @ 5 V

Maximum Operating Temperature

+150 °C

Height

30mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

2.5V

Produkta apraksts

Wolfspeed Silicon Carbide Power MOSFET Modules

Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

MOSFET Transistors, Wolfspeed

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Noliktavas stāvoklis patreiz nav pieejams

€ 1 405,00

€ 1 405,00 Katrs (bez PVN)

€ 1 700,05

€ 1 700,05 Katrs (Ieskaitot PVN)

Wolfspeed Dual SiC N-Channel MOSFET, 325 A, 1700 V, 7-Pin Half Bridge CAS300M17BM2

€ 1 405,00

€ 1 405,00 Katrs (bez PVN)

€ 1 700,05

€ 1 700,05 Katrs (Ieskaitot PVN)

Wolfspeed Dual SiC N-Channel MOSFET, 325 A, 1700 V, 7-Pin Half Bridge CAS300M17BM2
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

325 A

Maximum Drain Source Voltage

1700 V

Package Type

Half Bridge

Mounting Type

Screw Mount

Pin Count

7

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

1.76 kW

Transistor Configuration

Series

Maximum Gate Source Voltage

-10 V, +25 V

Width

61.4mm

Transistor Material

SiC

Number of Elements per Chip

2

Length

106.4mm

Typical Gate Charge @ Vgs

1076 nC @ 20 V, 1076 nC @ 5 V

Maximum Operating Temperature

+150 °C

Height

30mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

2.5V

Produkta apraksts

Wolfspeed Silicon Carbide Power MOSFET Modules

Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.

MOSFET Transistors, Wolfspeed

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more