Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
15.6 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Length
5.99mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.07mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 110,00
€ 1,10 Katrs (tiek piegadats Rulli) (bez PVN)
€ 133,10
€ 1,331 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
€ 110,00
€ 1,10 Katrs (tiek piegadats Rulli) (bez PVN)
€ 133,10
€ 1,331 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Rullis |
---|---|---|
100 - 240 | € 1,10 | € 11,00 |
250 - 490 | € 0,907 | € 9,07 |
500 - 990 | € 0,85 | € 8,50 |
1000+ | € 0,794 | € 7,94 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
15.6 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Length
5.99mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.07mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts