Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
3 A, 3.7 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
53 mΩ, 80 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.13 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Typical Gate Charge @ Vgs
10 nC @ 10 V, 8 nC @ 10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Produkta apraksts
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 7,14
€ 0,714 Katrs (Paka ir 10) (bez PVN)
€ 8,64
€ 0,864 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 7,14
€ 0,714 Katrs (Paka ir 10) (bez PVN)
€ 8,64
€ 0,864 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 40 | € 0,714 | € 7,14 |
50 - 90 | € 0,70 | € 7,00 |
100 - 240 | € 0,547 | € 5,47 |
250 - 490 | € 0,531 | € 5,31 |
500+ | € 0,452 | € 4,52 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
3 A, 3.7 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
53 mΩ, 80 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.13 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Typical Gate Charge @ Vgs
10 nC @ 10 V, 8 nC @ 10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Produkta apraksts