Dual N/P-Channel MOSFET, 3 A, 3.7 A, 30 V, 8-Pin SOIC Vishay SI4532ADY-T1-E3

RS noliktavas nr.: 710-4720Ražotājs: VishayRažotāja kods: SI4532ADY-T1-E3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

3 A, 3.7 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

53 mΩ, 80 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.13 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Typical Gate Charge @ Vgs

10 nC @ 10 V, 8 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

Produkta apraksts

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 7,14

€ 0,714 Katrs (Paka ir 10) (bez PVN)

€ 8,64

€ 0,864 Katrs (Paka ir 10) (Ieskaitot PVN)

Dual N/P-Channel MOSFET, 3 A, 3.7 A, 30 V, 8-Pin SOIC Vishay SI4532ADY-T1-E3
Izvēlēties iepakojuma veidu

€ 7,14

€ 0,714 Katrs (Paka ir 10) (bez PVN)

€ 8,64

€ 0,864 Katrs (Paka ir 10) (Ieskaitot PVN)

Dual N/P-Channel MOSFET, 3 A, 3.7 A, 30 V, 8-Pin SOIC Vishay SI4532ADY-T1-E3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
10 - 40€ 0,714€ 7,14
50 - 90€ 0,70€ 7,00
100 - 240€ 0,547€ 5,47
250 - 490€ 0,531€ 5,31
500+€ 0,452€ 4,52

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

3 A, 3.7 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

53 mΩ, 80 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.13 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Typical Gate Charge @ Vgs

10 nC @ 10 V, 8 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

Produkta apraksts

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt