Vishay Siliconix TrenchFET P-Channel MOSFET, 10 A, 30 V, 6-Pin SC-70-6L SQA403EJ-T1_GE3
Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
30 V
Package Type
SC-70-6L
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
13.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
26 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
1.35mm
Number of Elements per Chip
1
Transistor Material
Si
Length
2.2mm
Automotive Standard
AEC-Q101
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 693,00
€ 0,231 Katrs (Rulli ir 3000) (bez PVN)
€ 838,53
€ 0,28 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 693,00
€ 0,231 Katrs (Rulli ir 3000) (bez PVN)
€ 838,53
€ 0,28 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
30 V
Package Type
SC-70-6L
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
13.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
26 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
1.35mm
Number of Elements per Chip
1
Transistor Material
Si
Length
2.2mm
Automotive Standard
AEC-Q101
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products