Toshiba TK N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN TK9J90E

RS noliktavas nr.: 168-7789Ražotājs: ToshibaRažotāja kods: TK9J90E
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Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

900 V

Package Type

TO-3PN

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

15.5mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

46 nC @ 10 V

Number of Elements per Chip

1

Width

4.5mm

Height

20mm

Izcelsmes valsts

Japan

Produkta apraksts

MOSFET N-channel, TK8 & TK9 Series, Toshiba

MOSFET Transistors, Toshiba

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Noliktavas stāvoklis patreiz nav pieejams

€ 86,25

€ 3,45 Katrs (Tubina ir 25) (bez PVN)

€ 104,36

€ 4,174 Katrs (Tubina ir 25) (Ieskaitot PVN)

Toshiba TK N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN TK9J90E

€ 86,25

€ 3,45 Katrs (Tubina ir 25) (bez PVN)

€ 104,36

€ 4,174 Katrs (Tubina ir 25) (Ieskaitot PVN)

Toshiba TK N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN TK9J90E
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

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No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

900 V

Package Type

TO-3PN

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

15.5mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

46 nC @ 10 V

Number of Elements per Chip

1

Width

4.5mm

Height

20mm

Izcelsmes valsts

Japan

Produkta apraksts

MOSFET N-channel, TK8 & TK9 Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more