Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
5.8mm
Length
6.5mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1V
Height
2.3mm
€ 6,75
€ 0,27 Katrs (Paka ir 25) (bez PVN)
€ 8,17
€ 0,327 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
€ 6,75
€ 0,27 Katrs (Paka ir 25) (bez PVN)
€ 8,17
€ 0,327 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
5.8mm
Length
6.5mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1V
Height
2.3mm