STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8 A, 900 V, 3-Pin TO-247 STW9NK90Z

RS noliktavas nr.: 485-8623Ražotājs: STMicroelectronicsRažotāja kods: STW9NK90Z
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

900 V

Series

MDmesh, SuperMESH

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

72 nC @ 10 V

Width

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Height

20.15mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

€ 3,50

€ 3,50 Katrs (bez PVN)

€ 4,24

€ 4,24 Katrs (Ieskaitot PVN)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8 A, 900 V, 3-Pin TO-247 STW9NK90Z
Izvēlēties iepakojuma veidu

€ 3,50

€ 3,50 Katrs (bez PVN)

€ 4,24

€ 4,24 Katrs (Ieskaitot PVN)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8 A, 900 V, 3-Pin TO-247 STW9NK90Z
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

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1 - 9€ 3,50
10 - 24€ 3,15
25 - 99€ 3,00
100 - 499€ 2,40
500+€ 2,10

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

900 V

Series

MDmesh, SuperMESH

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

72 nC @ 10 V

Width

5.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.75mm

Maximum Operating Temperature

+150 °C

Height

20.15mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt