STMicroelectronics N-Channel MOSFET, 17 A, 650 V, 3-Pin D2PAK STB24NM60N
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
D2PAK (TO-263)
Series
MDmesh
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.75mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
46 nC @ 10 V
Width
10.4mm
Minimum Operating Temperature
-55 °C
Height
4.6mm
Produkta apraksts
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 37,50
€ 3,75 Katrs (tiek piegadats Rulli) (bez PVN)
€ 45,38
€ 4,54 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
€ 37,50
€ 3,75 Katrs (tiek piegadats Rulli) (bez PVN)
€ 45,38
€ 4,54 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
Noliktavas stāvoklis patreiz nav pieejams
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| Daudzums | Vienības cena |
|---|---|
| 10 - 99 | € 3,75 |
| 100 - 499 | € 3,35 |
| 500 - 999 | € 2,95 |
| 1000+ | € 2,55 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
D2PAK (TO-263)
Series
MDmesh
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.75mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
46 nC @ 10 V
Width
10.4mm
Minimum Operating Temperature
-55 °C
Height
4.6mm
Produkta apraksts
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products