Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
125 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.15 x 15.75 x 5.15mm
Produkta apraksts
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
€ 8,30
€ 4,15 Katrs (Paka ir 2) (bez PVN)
€ 10,04
€ 5,022 Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
€ 8,30
€ 4,15 Katrs (Paka ir 2) (bez PVN)
€ 10,04
€ 5,022 Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
2 - 8 | € 4,15 | € 8,30 |
10 - 98 | € 3,55 | € 7,10 |
100 - 248 | € 2,85 | € 5,70 |
250 - 498 | € 2,70 | € 5,40 |
500+ | € 2,50 | € 5,00 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
125 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.15 x 15.75 x 5.15mm
Produkta apraksts
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.