Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Series
RSJ250P10
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
50 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
9mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.1mm
Typical Gate Charge @ Vgs
60 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
4.5mm
Forward Diode Voltage
1.2V
Izcelsmes valsts
Korea, Republic Of
Produkta apraksts
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
€ 43,75
€ 1,75 Katrs (tiek piegadats Rulli) (bez PVN)
€ 52,94
€ 2,118 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
25
€ 43,75
€ 1,75 Katrs (tiek piegadats Rulli) (bez PVN)
€ 52,94
€ 2,118 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
25
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Rullis |
---|---|---|
25 - 45 | € 1,75 | € 8,75 |
50 - 120 | € 1,65 | € 8,25 |
125 - 245 | € 1,55 | € 7,75 |
250+ | € 1,40 | € 7,00 |
Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Series
RSJ250P10
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
50 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
9mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.1mm
Typical Gate Charge @ Vgs
60 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
4.5mm
Forward Diode Voltage
1.2V
Izcelsmes valsts
Korea, Republic Of
Produkta apraksts