onsemi NVMFD5C672NL Dual N-Channel MOSFET, 49 A, 60 V, 8-Pin DFN NVMFD5C672NLWFT1G

RS noliktavas nr.: 172-3408PRažotājs: onsemiRažotāja kods: NVMFD5C672NLWFT1G
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Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

49 A

Maximum Drain Source Voltage

60 V

Package Type

DFN

Series

NVMFD5C672NL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

±20 V

Length

6.1mm

Typical Gate Charge @ Vgs

12.3 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

2

Width

5.1mm

Height

1.05mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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Noliktavas stāvoklis patreiz nav pieejams

€ 30,00

€ 1,20 Katrs (tiek piegadats Rulli) (bez PVN)

€ 36,30

€ 1,452 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

onsemi NVMFD5C672NL Dual N-Channel MOSFET, 49 A, 60 V, 8-Pin DFN NVMFD5C672NLWFT1G
Izvēlēties iepakojuma veidu

€ 30,00

€ 1,20 Katrs (tiek piegadats Rulli) (bez PVN)

€ 36,30

€ 1,452 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

onsemi NVMFD5C672NL Dual N-Channel MOSFET, 49 A, 60 V, 8-Pin DFN NVMFD5C672NLWFT1G
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

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Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

49 A

Maximum Drain Source Voltage

60 V

Package Type

DFN

Series

NVMFD5C672NL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

±20 V

Length

6.1mm

Typical Gate Charge @ Vgs

12.3 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

2

Width

5.1mm

Height

1.05mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more