Nexperia PMV30UN2 N-Channel MOSFET, 5.4 A, 20 V, 3-Pin SOT-23 PMV30UN2R

RS noliktavas nr.: 170-4846Ražotājs: NexperiaRažotāja kods: PMV30UN2R
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

5.4 A

Maximum Drain Source Voltage

20 V

Package Type

TO-236

Series

PMV30UN2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

12 V

Length

3mm

Typical Gate Charge @ Vgs

6.2 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1mm

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

€ 405,00

€ 0,135 Katrs (Rulli ir 3000) (bez PVN)

€ 490,05

€ 0,163 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Nexperia PMV30UN2 N-Channel MOSFET, 5.4 A, 20 V, 3-Pin SOT-23 PMV30UN2R

€ 405,00

€ 0,135 Katrs (Rulli ir 3000) (bez PVN)

€ 490,05

€ 0,163 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Nexperia PMV30UN2 N-Channel MOSFET, 5.4 A, 20 V, 3-Pin SOT-23 PMV30UN2R
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Rullis
3000 - 3000€ 0,135€ 405,00
6000 - 12000€ 0,13€ 390,00
15000 - 27000€ 0,126€ 378,00
30000 - 72000€ 0,12€ 360,00
75000+€ 0,118€ 354,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

5.4 A

Maximum Drain Source Voltage

20 V

Package Type

TO-236

Series

PMV30UN2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

12 V

Length

3mm

Typical Gate Charge @ Vgs

6.2 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1mm

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more