Nexperia P-Channel MOSFET, 2 A, 20 V, 3-Pin SOT-23 NX2301P,215

RS noliktavas nr.: 780-5376PRažotājs: NexperiaRažotāja kods: NX2301P,215
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

4.5 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Noliktavas stāvoklis patreiz nav pieejams

€ 8,70

€ 0,087 Katrs (tiek piegadats Rulli) (bez PVN)

€ 10,53

€ 0,105 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Nexperia P-Channel MOSFET, 2 A, 20 V, 3-Pin SOT-23 NX2301P,215
Izvēlēties iepakojuma veidu

€ 8,70

€ 0,087 Katrs (tiek piegadats Rulli) (bez PVN)

€ 10,53

€ 0,105 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Nexperia P-Channel MOSFET, 2 A, 20 V, 3-Pin SOT-23 NX2301P,215
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

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DaudzumsVienības cenaPer Rullis
100 - 900€ 0,087€ 8,70
1000+€ 0,068€ 6,80

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

400 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

4.5 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more