IXYS IXYX120N120C3 IGBT, 240 A 1200 V, 3-Pin PLUS247, Through Hole
Tehniskie dokumenti
Specifikācija
Brand
IXYSMaximum Continuous Collector Current
240 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1500 W
Package Type
PLUS247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
50kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.34mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Izcelsmes valsts
United States
Produkta apraksts
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 1 041,00
€ 34,70 Katrs (Tubina ir 30) (bez PVN)
€ 1 259,61
€ 41,987 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 1 041,00
€ 34,70 Katrs (Tubina ir 30) (bez PVN)
€ 1 259,61
€ 41,987 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
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Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
IXYSMaximum Continuous Collector Current
240 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1500 W
Package Type
PLUS247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
50kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.34mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Izcelsmes valsts
United States
Produkta apraksts
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products