IXYS HiperFET, Polar N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-220 IXTP50N20P
Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
360 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.66mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
70 nC @ 10 V
Width
4.83mm
Height
9.15mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 47,50
€ 4,75 Katrs (tiek piegadats Tubina) (bez PVN)
€ 57,48
€ 5,75 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
€ 47,50
€ 4,75 Katrs (tiek piegadats Tubina) (bez PVN)
€ 57,48
€ 5,75 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena |
|---|---|
| 10 - 24 | € 4,75 |
| 25+ | € 4,10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
360 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.66mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
70 nC @ 10 V
Width
4.83mm
Height
9.15mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products