IXYS HiperFET, Polar3 N-Channel MOSFET, 80 A, 600 V, 3-Pin PLUS247 IXFX80N60P3
Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
600 V
Series
HiperFET, Polar3
Package Type
PLUS247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.3 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
5.21mm
Length
16.13mm
Typical Gate Charge @ Vgs
190 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
21.34mm
Izcelsmes valsts
United States
Produkta apraksts
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 498,00
€ 16,60 Katrs (Tubina ir 30) (bez PVN)
€ 602,58
€ 20,086 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 498,00
€ 16,60 Katrs (Tubina ir 30) (bez PVN)
€ 602,58
€ 20,086 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
600 V
Series
HiperFET, Polar3
Package Type
PLUS247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
1.3 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
5.21mm
Length
16.13mm
Typical Gate Charge @ Vgs
190 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
21.34mm
Izcelsmes valsts
United States
Produkta apraksts
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products