Infineon HEXFET N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-220AB IRF3205ZPBF
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
55 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.54mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
76 nC @ 10 V
Width
4.69mm
Height
8.77mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 28,00
€ 1,40 Katrs (tiek piegadats Tubina) (bez PVN)
€ 33,88
€ 1,694 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
20
€ 28,00
€ 1,40 Katrs (tiek piegadats Tubina) (bez PVN)
€ 33,88
€ 1,694 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Penālis |
|---|---|---|
| 20 - 48 | € 1,40 | € 2,80 |
| 50 - 98 | € 1,30 | € 2,60 |
| 100 - 198 | € 1,20 | € 2,40 |
| 200+ | € 1,10 | € 2,20 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
55 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.54mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
76 nC @ 10 V
Width
4.69mm
Height
8.77mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products