Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1

RS noliktavas nr.: 232-0396Ražotājs: InfineonRažotāja kods: IMW65R083M1HXKSA1
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Tehniskie dokumenti

Specifikācija

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

CoolSiC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.111 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Transistor Material

Silicon

Number of Elements per Chip

1

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Noliktavas stāvoklis patreiz nav pieejams

€ 186,00

€ 6,20 Katrs (Tubina ir 30) (bez PVN)

€ 225,06

€ 7,502 Katrs (Tubina ir 30) (Ieskaitot PVN)

Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1

30

Pieejams komplektos pa 30
30€ 186,00
60€ 354,00
90€ 531,00
120€ 708,00
150€ 825,00
180€ 990,00
210€ 1 155,00
240€ 1 320,00
270€ 1 485,00
300€ 1 650,00
330€ 1 815,00
360€ 1 980,00
390€ 2 145,00
420€ 2 310,00
450€ 2 475,00

€ 186,00

€ 6,20 Katrs (Tubina ir 30) (bez PVN)

€ 225,06

€ 7,502 Katrs (Tubina ir 30) (Ieskaitot PVN)

Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1
Noliktavas stāvoklis patreiz nav pieejams

30

Pieejams komplektos pa 30
30€ 186,00
60€ 354,00
90€ 531,00
120€ 708,00
150€ 825,00
180€ 990,00
210€ 1 155,00
240€ 1 320,00
270€ 1 485,00
300€ 1 650,00
330€ 1 815,00
360€ 1 980,00
390€ 2 145,00
420€ 2 310,00
450€ 2 475,00

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Penālis
30 - 30€ 6,20€ 186,00
60 - 120€ 5,90€ 177,00
150+€ 5,50€ 165,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

CoolSiC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.111 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Transistor Material

Silicon

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more