Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
10.4 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
10.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
7.67mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
23 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 2 077,50
€ 0,831 Katrs (Rulli ir 2500) (bez PVN)
€ 2 513,78
€ 1,006 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 2 077,50
€ 0,831 Katrs (Rulli ir 2500) (bez PVN)
€ 2 513,78
€ 1,006 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
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Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
10.4 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
10.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
7.67mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
23 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts