Diodes Inc N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-323 2N7002W-7-F

RS noliktavas nr.: 708-2399Ražotājs: DiodesZetexRažotāja kods: 2N7002W-7-F
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

115 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

13.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.2mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

€ 12,20

€ 0,244 Katrs (Paka ir 50) (bez PVN)

€ 14,76

€ 0,295 Katrs (Paka ir 50) (Ieskaitot PVN)

Diodes Inc N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-323 2N7002W-7-F
Izvēlēties iepakojuma veidu

€ 12,20

€ 0,244 Katrs (Paka ir 50) (bez PVN)

€ 14,76

€ 0,295 Katrs (Paka ir 50) (Ieskaitot PVN)

Diodes Inc N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-323 2N7002W-7-F
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
50 - 550€ 0,244€ 12,20
600 - 1450€ 0,126€ 6,30
1500+€ 0,123€ 6,15

Ideate. Create. Collaborate

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No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

115 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

13.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.2mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more