Vishay N-Channel MOSFET, 200 mA, 20 V, 3-Pin SC-75 SI1032R-T1-GE3
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
1
Width
0.86mm
Length
1.68mm
Typical Gate Charge @ Vgs
750 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 438,00
€ 0,146 Katrs (Rulli ir 3000) (bez PVN)
€ 529,98
€ 0,177 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 438,00
€ 0,146 Katrs (Rulli ir 3000) (bez PVN)
€ 529,98
€ 0,177 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-75
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
280 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Number of Elements per Chip
1
Width
0.86mm
Length
1.68mm
Typical Gate Charge @ Vgs
750 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products