Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.6mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Transistor Material
Si
Length
10.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.15mm
Izcelsmes valsts
Malaysia
Produkta apraksts
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 50,00
€ 1,00 Katrs (Tubina ir 50) (bez PVN)
€ 60,50
€ 1,21 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 50,00
€ 1,00 Katrs (Tubina ir 50) (bez PVN)
€ 60,50
€ 1,21 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
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Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
4.6mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Transistor Material
Si
Length
10.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.15mm
Izcelsmes valsts
Malaysia
Produkta apraksts