Infineon 1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP MOSFET Gate Driver for

RS noliktavas nr.: 179-969Ražotājs: InfineonRažotāja kods: EVAL6ED2231S12TM1TOBO1
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Tehniskie dokumenti

Specifikācija

Power Management Function

MOSFET Gate Driver

For Use With

IGBT/SiC with Integrated Bootstrap Diode and OCP

Kit Classification

Motor Driver Board

Featured Device

6ED2231S12T

Kit Name

1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP

Noliktavas stāvoklis patreiz nav pieejams

€ 1 260,00

€ 1 260,00 Katrs (bez PVN)

€ 1 524,60

€ 1 524,60 Katrs (Ieskaitot PVN)

Infineon 1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP MOSFET Gate Driver for

€ 1 260,00

€ 1 260,00 Katrs (bez PVN)

€ 1 524,60

€ 1 524,60 Katrs (Ieskaitot PVN)

Infineon 1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP MOSFET Gate Driver for
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

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Tehniskie dokumenti

Specifikācija

Power Management Function

MOSFET Gate Driver

For Use With

IGBT/SiC with Integrated Bootstrap Diode and OCP

Kit Classification

Motor Driver Board

Featured Device

6ED2231S12T

Kit Name

1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP