BGAP2S30AE6327XTSA1 Infineon, RF Amplifier, 35 dB 4.2 GHz, 16-Pin PG-TSNP-16-12

RS noliktavas nr.: 349-420Ražotājs: InfineonRažotāja kods: BGAP2S30AE6327XTSA1
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Specifikācija

Brand

Infineon

Typical 3dB Bandwidth

3300 → 4200MHz

Typical Power Gain

35 dB

Typical Output Power

28.5dBm

Typical Noise Figure

3.2dB

Number of Channels per Chip

1

Maximum Operating Frequency

4.2 GHz

Package Type

PG-TSNP-16-12

Pin Count

16

Izcelsmes valsts

Malaysia

Noliktavas stāvoklis patreiz nav pieejams

P.O.A.

BGAP2S30AE6327XTSA1 Infineon, RF Amplifier, 35 dB 4.2 GHz, 16-Pin PG-TSNP-16-12

1

Pieejams komplektos pa 1
1P.O.A.
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5P.O.A.
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11P.O.A.
12P.O.A.
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14P.O.A.
15P.O.A.

P.O.A.

BGAP2S30AE6327XTSA1 Infineon, RF Amplifier, 35 dB 4.2 GHz, 16-Pin PG-TSNP-16-12
Noliktavas stāvoklis patreiz nav pieejams

1

Pieejams komplektos pa 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Noliktavas stāvoklis patreiz nav pieejams

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Tehniskie dokumenti

Specifikācija

Brand

Infineon

Typical 3dB Bandwidth

3300 → 4200MHz

Typical Power Gain

35 dB

Typical Output Power

28.5dBm

Typical Noise Figure

3.2dB

Number of Channels per Chip

1

Maximum Operating Frequency

4.2 GHz

Package Type

PG-TSNP-16-12

Pin Count

16

Izcelsmes valsts

Malaysia