Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
7.4 A
Maximum Drain Source Voltage
40 V
Package Type
TSOP-6
Series
SQ Rugged
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
10 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Length
3.1mm
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 19,70
Katrs (tiek piegadats Rulli) (bez PVN)
€ 23,84
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
€ 19,70
Katrs (tiek piegadats Rulli) (bez PVN)
€ 23,84
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
100
Noliktavas stāvoklis patreiz nav pieejams
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
7.4 A
Maximum Drain Source Voltage
40 V
Package Type
TSOP-6
Series
SQ Rugged
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
10 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Length
3.1mm
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1mm
Minimum Operating Temperature
-55 °C
Produkta apraksts