Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
4V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
€ 750,00
€ 0,25 Katrs (Rulli ir 3000) (bez PVN)
€ 907,50
€ 0,302 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 750,00
€ 0,25 Katrs (Rulli ir 3000) (bez PVN)
€ 907,50
€ 0,302 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
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Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
4V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China