Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
340 A
Maximum Drain Source Voltage
40 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
5mm
Length
5mm
Typical Gate Charge @ Vgs
103 nC @ 10 V
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
0.95mm
€ 5,25
€ 1,05 Katrs (Paka ir 5) (bez PVN)
€ 6,35
€ 1,27 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 5,25
€ 1,05 Katrs (Paka ir 5) (bez PVN)
€ 6,35
€ 1,27 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
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Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
340 A
Maximum Drain Source Voltage
40 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
5mm
Length
5mm
Typical Gate Charge @ Vgs
103 nC @ 10 V
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
0.95mm