Toshiba TK N-Channel MOSFET, 72 A, 80 V, 3-Pin TO-220SIS TK72A08N1,S4X(S
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
80 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Izcelsmes valsts
China
Produkta apraksts
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 5,50
€ 1,10 Katrs (Paka ir 5) (bez PVN)
€ 6,66
€ 1,331 Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 5,50
€ 1,10 Katrs (Paka ir 5) (bez PVN)
€ 6,66
€ 1,331 Katrs (Paka ir 5) (Ieskaitot PVN)
5
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 20 | € 1,10 | € 5,50 |
| 25 - 95 | € 0,972 | € 4,86 |
| 100 - 245 | € 0,849 | € 4,24 |
| 250 - 495 | € 0,81 | € 4,05 |
| 500+ | € 0,787 | € 3,94 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
80 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Izcelsmes valsts
China
Produkta apraksts
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products