Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Izcelsmes valsts
China
Produkta apraksts
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
€ 18,90
€ 18,90 Katrs (bez PVN)
€ 22,87
€ 22,87 Katrs (Ieskaitot PVN)
Standarts
1
€ 18,90
€ 18,90 Katrs (bez PVN)
€ 22,87
€ 22,87 Katrs (Ieskaitot PVN)
Standarts
1
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena |
---|---|
1 - 9 | € 18,90 |
10 - 49 | € 14,80 |
50 - 99 | € 14,40 |
100 - 199 | € 14,00 |
200+ | € 13,70 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
62 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Izcelsmes valsts
China
Produkta apraksts