Tehniskie dokumenti
Specifikācija
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
120 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
120 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Izcelsmes valsts
Japan
Produkta apraksts
Small Signal NPN Transistors, Toshiba
Bipolar Transistors, Toshiba
€ 6,30
€ 0,252 Katrs (Paka ir 25) (bez PVN)
€ 7,62
€ 0,305 Katrs (Paka ir 25) (Ieskaitot PVN)
25
€ 6,30
€ 0,252 Katrs (Paka ir 25) (bez PVN)
€ 7,62
€ 0,305 Katrs (Paka ir 25) (Ieskaitot PVN)
25
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
25 - 100 | € 0,252 | € 6,30 |
125 - 225 | € 0,222 | € 5,55 |
250 - 475 | € 0,216 | € 5,40 |
500 - 1225 | € 0,211 | € 5,28 |
1250+ | € 0,206 | € 5,15 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
120 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
120 V
Maximum Emitter Base Voltage
120 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Izcelsmes valsts
Japan
Produkta apraksts