Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.4mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.15mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 85,00
€ 1,70 Katrs (Tubina ir 50) (bez PVN)
€ 102,85
€ 2,057 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 85,00
€ 1,70 Katrs (Tubina ir 50) (bez PVN)
€ 102,85
€ 2,057 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 1,70 | € 85,00 |
100 - 450 | € 1,35 | € 67,50 |
500 - 950 | € 1,15 | € 57,50 |
1000 - 4950 | € 0,947 | € 47,35 |
5000+ | € 0,896 | € 44,80 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.4mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.15mm
Minimum Operating Temperature
-55 °C
Produkta apraksts