Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 72,50
€ 1,45 Katrs (Tubina ir 50) (bez PVN)
€ 87,72
€ 1,754 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 72,50
€ 1,45 Katrs (Tubina ir 50) (bez PVN)
€ 87,72
€ 1,754 Katrs (Tubina ir 50) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
50
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 1,45 | € 72,50 |
100 - 450 | € 1,15 | € 57,50 |
500 - 950 | € 0,954 | € 47,70 |
1000 - 4950 | € 0,801 | € 40,05 |
5000+ | € 0,753 | € 37,65 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Produkta apraksts